Thermodynamic analysis of hole trapping in SiO2 films on silicon

Autor:	N. Capron, B. Poumellec, G. Boureau, J. Garapon, Stéphane Carniato
Rok vydání:	2001
Předmět:	Condensed Matter::Materials Science Materials science Condensed matter physics Silicon chemistry General Physics and Astronomy chemistry.chemical_element Trapping Local equilibrium Oxygen
Zdroj:	Journal of Applied Physics. 89:165-168
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1329142
Popis:	A thermodynamic approach based on the existence of a local equilibrium is used to evaluate the temperature dependence of the number of defects responsible for hole trapping (oxygen vacancies transformed into E′ centers) near the Si–SiO2 interface. This approach eliminates the discrepancies between theoretical calculations of the formation energy of oxygen vacancies and hole trapping modeling.
Databáze:	OpenAIRE
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