Semi‐insulating nature of gas source molecular beam epitaxial InGaP grown at very low temperatures

Autor:	J. Ramdani, Yufan He, Salah M. Bedair, Nadia A. El-Masry, David C. Look
Rok vydání:	1993
Předmět:	Electron mobility Physics and Astronomy (miscellaneous) Condensed matter physics Chemistry Annealing (metallurgy) Electrical resistivity and conductivity Activation energy Thin film Epitaxy Molecular beam Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 63:1231-1233
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.109781
Popis:	InxGa1−xP lattice matched to GaAs (x≂0.51) has proven to be useful in many device applications. Here we show that undoped, semi‐insulating InGaP is possible by growing with gas source molecular beam epitaxy at very low temperatures, 150–250 °C. The material grown at about 200 °C is n‐type with a 296‐K resistivity of 9×105 Ω cm, a mobility of 120 cm2/V s, and a donor activity energy of 0.48 eV. When annealed at 600 °C for 1 h, the resistivity increases to greater than 109 Ω cm and the resistivity activation energy to 0.8 eV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ce4951fd1ed3241315eec7fc6cf6e6af https://doi.org/10.1063/1.109781 Zobrazit plný text záznamu