Photodetectors based on GaInAsSb/GaAlAsSb heterostructures for the practical tasks of precision diode laser spectroscopy

Autor: null Spiridonov M. V., null Stavrovskii D. B., null Kuz'michev A. S., null Nadezhdinskii A. I., null Ponurovskii Ya. Ya., null Yakovlev Yu. P., null Il`inskaya N. D., null Pivovarova A. A., null Konovalov G. G., null Andreev I. A., null Kunitsyna E. V.
Rok vydání: 2022
Zdroj: Semiconductors. 56:343
ISSN: 1726-7315
Popis: The paper considers the uncooled photodetectors based on GaInAsSb/GaAlAsSb heterostructures, which can be applied in precision diode laser spectroscopy. The spectral sensitivity range of photodetectors with a photosensitive area diameter of 1.0 mm and 2.0 mm is 1.0-2.4 μm. The current monochromatic sensitivity at the wavelength of 2.1 μm has a value of 1.0 A/W without bias. The capacity reaches 375 pF with a photosensitive area diameter of 1.0 mm and 800-5000 pF with 2 mm. The modern gas analyzers based on diode lasers and developed photodetectors for medical screening diagnostics by analyzing the gas compositions of exhaled air, for control of impurity gases in the process of rectification of inorganic hydrides, control of methane leaks in gas pipelines, as well as for registration of exhaust gases of a moving car are presented. Keywords: photodetector, heterostructure, diode laser spectroscopy, gas analyzer.
Databáze: OpenAIRE