Hierarchical Sphere-Like ZnO–CuO Grown in a Controlled Boundary Layer for High-Performance H2S Sensing
| Autor: | Ahmed Abdala, Mammoud Goodarz Naseri, Siamak Pilban Jahromi, Ahmad Kamalianfar |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry chemistry.chemical_element Heterojunction 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure 01 natural sciences Electronic Optical and Magnetic Materials Semiconductor Chemical engineering chemistry Physical vapor deposition 0103 physical sciences Nano Materials Chemistry Electrical and Electronic Engineering 0210 nano-technology business Layer (electronics) |
| Zdroj: | Journal of Electronic Materials. |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | A highly sensitive sensor for hydrogen sulfide based on a p–n junction between metal-oxide semiconductors is reported herein. Uniform ZnO–CuO hollow spheres were synthesized by a combination of chemical and physical methods. To deposit a uniform ZnO layer, the silicon substrate was tilted from 0° to 40° relative to the gas flow direction during the growth process. Next, a low concentration of CuO nanoparticles was decorated onto the ZnO nano/microstructure using physical vapor deposition (PVD). The ZnO–CuO heterojunction sensor showed a remarkable response of 112 at 100 ppm $${\text{H}}_{2} {\text{S}}$$ and 158°C. The response time and recovery time were calculated to be 8 s and 35 s, respectively. The response to H2S concentration increases of 100 ppm was as high as 3.5 times compared with ZnO alone. Finally, a sensing mechanism is proposed and discussed. |
| Databáze: | OpenAIRE |
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