Effects of MOSFET Gate Driving on Conducted Emissions in a Flyback LED Driver
| Autor: | R. Harry Arjadi, Elvina Trivida, Siddiq Wahyu Hidayat, Yoppy, Tyas Ari Wahyu Wijanarko, Hutomo Wahyu Nugroho |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Flyback converter business.industry 020209 energy 020208 electrical & electronic engineering Flyback transformer Electrical engineering 02 engineering and technology EMI MOSFET 0202 electrical engineering electronic engineering information engineering Voltage spike business Electrical efficiency Diode Voltage |
| Zdroj: | 2019 IEEE Conference on Energy Conversion (CENCON). |
| Popis: | One of the key components in switching power supplies is the main switch, of which MOSFET is commonly used. High dv/dt and di/dt are inherent in MOSFET switching operation, and so it is a major source of electromagnetic emissions that may fail the standard limits. In this paper, effects of MOSFET gate driving on conducted emissions are examined. Measurements are made on a prototype of flyback LED driver. It is found that increasing gate resistance could suppress the drain turn-off oscillation voltage. By experiment, an external gate resistance necessary to reduce emission below limit lines is obtained. Anti-parallel diode speeds turn-off up but increases EMI level. It was confirmed that the noise upper 20MHz was originating from the drain voltage spike. Instead of anti-parallel, the diode can be also connected in parallel to the gate resistance. In this way, it can facilitate faster MOSFET turn-on transients, and therefore power efficiency had shown an improvement but without increasing EMI level. |
| Databáze: | OpenAIRE |
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