Contactless evaluation of semi-insulating GaAs wafer resistivity using the time-dependent charge measurement
| Autor: | R. Stibal, J. Windscheif, W. Jantz |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
chemistry.chemical_classification
Range (particle radiation) Materials science business.industry Resolution (electron density) Mineralogy Charge density Charge (physics) Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Electrical resistivity and conductivity Materials Chemistry Optoelectronics Wafer Electrical and Electronic Engineering business Inorganic compound Voltage |
| Zdroj: | Semiconductor Science and Technology. 6:995-1001 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/6/10/008 |
| Popis: | A method based on time-dependent measurement of charge transients has been developed to evaluate the specific resistivity of semi-insulating wafers quickly, non-destructively and with good lateral resolution. The material is inserted between capacitive electrodes. The time-dependent charge distribution after application of a voltage step allows evaluation of the resistivity with high accuracy in the range 106-109 Omega cm. The technique has been elaborated to allow rapid contactless scanning of wafers for routine measurement of the lateral variation of resistivity with a resolution of about 2 mm2. The results are in agreement with conventional Hall measurements. The mechanical and electronic systems are described in detail. Scans across wafers cut from as-grown as well as annealed ingots are presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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