Exciton degradation due to group V interdiffusion in InGaAs/InP quantum wells during annealing or subsequent growth by MOVPE
| Autor: | C.H. Joyner, L.M. Ostar, A.G. Dentai |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
chemistry.chemical_classification
Condensed matter physics Condensed Matter::Other business.industry Annealing (metallurgy) Chemistry Exciton Quantum-confined Stark effect Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Inorganic Chemistry Condensed Matter::Materials Science symbols.namesake Stark effect Materials Chemistry symbols Metalorganic vapour phase epitaxy Photonics business Inorganic compound Quantum well |
| Zdroj: | Journal of Crystal Growth. 121:413-416 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(92)90151-8 |
| Popis: | Room temperature excitons are necessary to make many devices employing the quantum confined Stark effect. We investigate the degradation of room temperature excitonic absorptions in InGaAs/InP quantum wells under growth conditions used to make integrated photonic and opto-electronic devices involving multiple regrowths. We describe various conditions of temperature and time under which we have observed these excitons to survive or degrade, and offer suggestions for device construction. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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