Smart digital micro-capacitor based on doped nanocrystalline silicon with HFO2 high K insulator
| Autor: | Jack K. Luo, WI Milne, S. B. Milne, Yong Qing Fu, Andrew J. Flewitt |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Differential capacitance business.industry Electrical engineering Nanocrystalline silicon Insulator (electricity) Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Capacitance law.invention Capacitor Hardware_GENERAL law 0103 physical sciences Electrode Hardware_INTEGRATEDCIRCUITS Variable capacitor Optoelectronics 0210 nano-technology business High-κ dielectric |
| Zdroj: | 2016 IEEE 29th International Conference on Micro Electro Mechanical Systems (MEMS). |
| DOI: | 10.1109/memsys.2016.7421813 |
| Popis: | A digital variable capacitor has been designed and fabricated based on multi-cantilevers of doped nanocrystalline silicon with variable lengths, suspended over a bottom electrode on top of a high-k material, HfO2, to increase the tuning range of the capacitance. By applying a voltage between the electrodes, the electrostatic force pulls the beams in one-by-one, realizing a digital increase in capacitance. These devices were fabricated using a 4-mask process, and electrical tests confirmed the stepwise increase of the capacitance with voltage from the multi-cantilever digital capacitors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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