Characterization of Surface Layers on GaAs Single Crystals in Contact with Acid Aqueous Solutions

Autor: W. P. Gomes, S. Lingier
Rok vydání: 1991
Předmět:
Zdroj: Berichte der Bunsengesellschaft für physikalische Chemie. 95:170-176
ISSN: 0005-9021
DOI: 10.1002/bbpc.19910950210
Popis: From ellipsometric measurements, combined with surface analysis by SEM, Auger spectroscopy and X-ray diffraction, it appears that a porous arsenic layer develops upon the p-type gallium arsenide electrode surface in acid, aqueous indifferent electrolyte solution during anodic current flow. Due to its porosity, this layer does not affect the forward current-potential characteristics of the electrode. Also under open-circuit circumstances in the same electrolyte, the arsenic layer appears to grow. The probable reactions corresponding to both arsenic deposition processes are discussed.
Databáze: OpenAIRE