Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction
| Autor: | He Tian, Hongyu Yu, Robert Sokolovskij, Leandro Nicolas Sacco, Yutao Li, Hongyu Tang, Xuejun Fan, Hongze Zheng, Huaiyu Ye, Guoqi Zhang, Tian-Ling Ren |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Ambipolar diffusion business.industry Polarity (physics) Transistor Tungsten disulfide Stacking Heterojunction 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology High sensitive 01 natural sciences 0104 chemical sciences law.invention chemistry.chemical_compound chemistry law Thin-film transistor Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | ACS Applied Materials & Interfaces. 11:40850-40859 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.9b13773 |
| Popis: | In this work, a thin-film transistor gas sensor based on the p-N heterojunction is fabricated by stacking chemical vapor deposition-grown tungsten disulfide (WS2) with a sputtered indium–gallium–zi... |
| Databáze: | OpenAIRE |
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