SEM investigation on IGBT latch-up failure

Autor: Yajie Wang, Xueqing Cui, Changyong Fan, P. Jacob, M. Held, Wuchen Wu, Yangang Wang
Rok vydání: 2005
Předmět:
Zdroj: 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
DOI: 10.1109/icsict.2001.982074
Popis: Latch-up failure is one of the most important failure phenomena of IGBT modules because of the p-n-p-n sandwich device structure. Half-bridge IGBT modules latch-up failure was observed by a switching test. The SEM technique was employed in the failure analysis work in order to investigate how the module was destroyed by latching-up. This paper reports the failure analysis results and the relevant analysis techniques used in the work.
Databáze: OpenAIRE