Influence of microwave energy on semiconductors during ion implantation process

Autor:	H-C. Gay, P. Gibert, J. Lin-Kwang
Rok vydání:	2000
Předmět:	Materials science business.industry Annealing (metallurgy) Quantitative Biology::Tissues and Organs General Physics and Astronomy Conductivity Ion Ion implantation Semiconductor Transmission electron microscopy Wafer Atomic physics business Microwave
Zdroj:	Journal of Applied Physics. 88:3968
ISSN:	0021-8979
DOI:	10.1063/1.1289218
Popis:	Microwave energy is used during the implantation-annealing process of semiconductors where it is shown that the implant ion damage anneal takes place at the same time as the implantation step. The microwave energy is observed to be focused within the plasma volume created by the electron–hole pairs, where the conductivity is increased considerably. It is shown that the implantation takes place perpendicularly with respect to the wafer surface and that there is very little lateral redistribution of ions. The transmission electron microscopy and measurements of the implanted zone confirm the predicted good results of this process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ce09a126cbf3d347bc4de523214b5841 https://doi.org/10.1063/1.1289218 Zobrazit plný text záznamu