Compressively-strained GaSb nanowires with core-shell heterostructures
| Autor: | Johannes Svensson, Lars-Erik Wernersson, Zhongyunshen Zhu, Axel R. Persson, Reine Wallenberg, Andrei Gromov |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Diffraction Electron mobility Materials science Scattering business.industry Nanowire Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Atomic and Molecular Physics and Optics symbols.namesake Effective mass (solid-state physics) 0103 physical sciences symbols Optoelectronics General Materials Science Electrical and Electronic Engineering 0210 nano-technology business Raman scattering |
| Zdroj: | Nano Research. 13:2517-2524 |
| ISSN: | 1998-0000 1998-0124 |
| DOI: | 10.1007/s12274-020-2889-3 |
| Popis: | GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties. Here, we for the first time demonstrate epitaxial GaSb-GaAsxSb1−x core-shell nanowires with a compressively strained core. Both axial and hydrostatic strain in GaSb core have been measured by X-ray diffraction (XRD) and Raman scattering, respectively. The optimal sample, almost without plastic relaxation, has an axial strain of −0.88% and a hydrostatic strain of −1.46%, leading to a noticeable effect where the light hole band is calculated to be 33.4 meV above the heavy hole band at the Γ-point. This valence band feature offers more light holes to contribute the transport process, and thus may provide enhanced hole mobility by reducing both the interband scattering and the hole effective mass. Our results show that lattice-mismatched epitaxial core-shell heterostructures of high quality can also be realized in the promising yet demanding GaSb-based system. |
| Databáze: | OpenAIRE |
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