Ge incorporation in gallium oxide nanostructures grown by thermal treatment
| Autor: | Bianchi Méndez, Emilio Nogales, Manuel Alonso-Orts, Ana M. Sanchez |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Dopant business.industry 020502 materials Mechanical Engineering Doping Nanowire chemistry.chemical_element Cathodoluminescence Germanium 02 engineering and technology 0205 materials engineering chemistry Nanocrystal Mechanics of Materials Optoelectronics General Materials Science Germanate Gallium business |
| Zdroj: | Journal of Materials Science. 55:11431-11438 |
| ISSN: | 1573-4803 0022-2461 |
| Popis: | Effective doping of semiconductor oxide nanostructures is needed to control n-type conductivity; however, out-diffusion of impurities in high quality crystals is still a bottleneck in nanotechnology. Here, germanium-doped gallium oxide (β-Ga2O3) nanowires have been grown by a thermal evaporation method. Two temperatures, close to Ge melting point, were chosen for the dynamic annealing of metallic gallium and germanium powders. At 840 °C, Ga2O3 nanowires and nanobelts grow along the b or c direction, leaving gallium germanate particles at the tip in both cases. Wider structures were produced at 940 °C, decorated with a Ge nanocrystal at the end. Transmission electron microscopy has been used to establish the vapor–liquid–solid-like growth process for the formation of these structures. The influence of Ge incorporation in the nanostructures has been assessed by cathodoluminescence and micro-Raman spectroscopy. The presence of Ge in β-Ga2O3 nanostructures is essential for electronic and optoelectronic applications since Ge is potentially the most effective n-type dopant for β-Ga2O3. |
| Databáze: | OpenAIRE |
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