Wafer-scale MoS2 for P-type field effect transistor arrays and defects-related electrical characteristics
Autor: | Baojun Zhang, Weihua Wang, Fang Wang, Baojuan Xin, Xichao Di, Xin Shan, Zhitang Song, Junqing Wei, Kailiang Zhang |
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Rok vydání: | 2021 |
Předmět: |
010302 applied physics
Materials science business.industry Semiconductor materials Doping Metals and Alloys chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Molybdenum 0103 physical sciences Thermal Materials Chemistry Optoelectronics Electrical performance Field-effect transistor Wafer 0210 nano-technology business |
Zdroj: | Thin Solid Films. 732:138798 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2021.138798 |
Popis: | Because of their fascinating electrical/optoelectrical characteristics, two-dimensional molybdenum disulphide (MoS2) attracts much attention recently. However, it is still a challenge to fabricate wafer-scale MoS2 nanofilms of controlled thickness and high quality and that, limits their application. Here, a two-step thermal vulcanization method is proposed to fabricate wafer-scale MoS2 nanofilms with different thicknesses (3-10 layers). The synthesized MoS2 nanofilms have high uniformity and good quality. Furthermore, back gate field effect transistor (FET) arrays were fabricated based on these wafer-scale MoS2 nanofilms. The FET devices showed good electrical performance, mobility in the range of 0.44 ~ 0.96 cm2V−1s−1 and on/off ratio of ~103. Here, first-principle calculation was used to analyse the different types of defects observed in the tri-layer MoS2, the doping effects induced by the defects were also discussed. This work provides a reliable way to fabricate wafer-scale MoS2 nanofilms and give a detailed study of the electrical properties of multilayers MoS2 nanofilms paving the way for the manufacture of two-dimensional semiconductor materials. |
Databáze: | OpenAIRE |
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