Impact of Strain Layer on Gate Leakage and Interface-State for nMOSFETs Fabricated by Stress-Memorization Technique

Autor:	Tsung-Yu Chiang, Chia Chun Liao, Min Chen Lin, Tien-Sheng Chao
Rok vydání:	2011
Předmět:	Materials science business.industry General Chemical Engineering Electrochemistry Optoelectronics General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry business Memorization Leakage (electronics)
Zdroj:	Electrochemical and Solid-State Letters. 14:H30
ISSN:	1099-0062
DOI:	10.1149/1.3506399
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cdea76c66c3929b34976efda8d0f6e73 https://doi.org/10.1149/1.3506399 Zobrazit plný text záznamu