Characterization of etched facets for GaN-based lasers

Autor:	R. Gruhler, M. Scherer, V. Schwegler, O. Hollricher, Gokhan Ulu, M. Seyboth, Markus Kamp, M.S. Unlu, Franz Eberhard, C. Kirchner
Rok vydání:	2001
Předmět:	Materials science Scanning electron microscope business.industry Physics::Optics Heterojunction Substrate (electronics) Nitride Condensed Matter Physics Laser Epitaxy law.invention Inorganic Chemistry Condensed Matter::Materials Science Optics Resist law Materials Chemistry Sapphire business
Zdroj:	Journal of Crystal Growth. 230:554-557
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(01)01296-9
Popis:	Dry-etching of laser facets is commonly used for (InAl)GaN/sapphire-based structures since the epitaxial planes of the nitride layers are rotated with respect to the substrate planes making cleaving impractical. To achieve steep and smooth facets by chemically assisted ion beam etching, a 3-layer resist system is developed for patterning. Characterization by scanning electron microscopy and atomic force microscopy shows facets with root-mean-square roughnesses of 7 nm and inclination angles of 2–4°. Optically pumped lasers yield low threshold excitation densities for fully doped separate confinement heterostructure lasers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cde8fd3a5434747abe45774255329b3f https://doi.org/10.1016/s0022-0248(01)01296-9 Zobrazit plný text záznamu Full Text from ScienceDirect