Enhanced Carrier Lifetimes and Suppression of Midgap States in GaAs at a Magnetic Metal Interface
| Autor: | B. T. Jonker, R. T. Holm, R. J. Wagner, Orest J. Glembocki |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Condensed matter physics business.industry General Physics and Astronomy Fermi energy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Metal Condensed Matter::Materials Science Ferromagnetism visual_art visual_art.visual_art_medium Optoelectronics business Layer (electronics) |
| Zdroj: | Physical Review Letters. 79:4886-4889 |
| ISSN: | 1079-7114 0031-9007 |
| DOI: | 10.1103/physrevlett.79.4886 |
| Popis: | We report the first measurement of room temperature carrier lifetimes at a magnetic metal--semiconductor interface, $\mathrm{Fe}/\mathrm{GaAs}(001)\ensuremath{-}(2\ifmmode\times\else\texttimes\fi{}4)$. The lifetimes are significantly enhanced relative to uncoated or sulfur-passivated surfaces, or the $\mathrm{Al}/\mathrm{GaAs}(001)\ensuremath{-}(2\ifmmode\times\else\texttimes\fi{}4)$ interface. These enhanced lifetimes correlate with a corresponding decrease in the density of midgap states which otherwise dominate the character of the GaAs(001) surface. The epitaxial Fe film provides both a ferromagnetic contact and a superior surface-passivating layer which does not pin the Fermi energy. |
| Databáze: | OpenAIRE |
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