High luminous flux semiconductor wafer-bonded (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/GaP large area light-emitting diodes

Autor:	R.J. Weissb, Fred A. Kish, D. A. Vanderwater, Dennis C Defevere, G.R. Trott
Rok vydání:	2005
Předmět:	Materials science Wafer bonding business.industry Thermal resistance chemistry.chemical_element Tungsten law.invention Gallium arsenide Luminous flux chemistry.chemical_compound Electricity generation chemistry law Optoelectronics Wafer business Light-emitting diode
Zdroj:	52nd Annual Device Research Conference.
DOI:	10.1109/drc.1994.1009461
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cddfc2af266b133c45cc6502754be6b6 https://doi.org/10.1109/drc.1994.1009461 Zobrazit plný text záznamu