Effects of continuously graded or step-graded In Al1−As buffer on the performance of InP-based In0.83Ga0.17As photodetectors
| Autor: | Aowen Li, Li Zhou, X.Y. Chen, Ye Zhang, Hsby Li, Yi Gu, S. P. Xi |
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| Rok vydání: | 2015 |
| Předmět: |
Diffraction
X-ray absorption spectroscopy Materials science Photoluminescence business.industry Photodetector chemistry.chemical_element Condensed Matter Physics Buffer (optical fiber) Inorganic Chemistry Optics chemistry Materials Chemistry Optoelectronics business Layer (electronics) Indium Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 425:337-340 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2015.03.040 |
| Popis: | InP-based high indium content In 0.83 Ga 0.17 As photodetector structures with lattice mismatch up to 2.1% have been grown by gas source molecular beam epitaxy system. The photodetectors using continuously graded and step-graded In x Al 1−x As buffer structures were grown and demonstrated. The effects of the buffer scheme were investigated by the measurements of atomic force microscopy, high-resolution X-ray diffraction, photoluminescence and device performance. Results show that the full relaxation of the photodetector structure has been achieved by using continuously graded InAlAs buffer. Superior optical properties and lower dark currents can be reached for the photodetector structure with continuously graded buffer layer. |
| Databáze: | OpenAIRE |
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