DX centers in Si-doped InxAl1−xAs (0.3⩽x⩽0.5)
| Autor: | Mark Isler |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Range (particle radiation)
X-ray absorption spectroscopy Chemistry Extrapolation chemistry.chemical_element Trapping High-electron-mobility transistor Condensed Matter Physics Poisson distribution Electronic Optical and Magnetic Materials symbols.namesake Materials Chemistry symbols Electrical and Electronic Engineering Atomic physics Ionization energy Indium |
| Zdroj: | Solid-State Electronics. 46:585-588 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(01)00304-5 |
| Popis: | A multilevel donor model is developed, which takes into account the negative charge and the two-electron occupation probability of DX centers and also considers coexisting hydrogenic states. By solving Schrodinger's and Poisson's equations self-consistently, this model is applied to calculate the sheet carrier density in metamorphic InxAl1−xAs/InxGa1−xAs HEMT structures on GaAs for indium contents x in the range 0.3⩽x⩽0.5. By comparing the calculations with reported Hall data, the experimentally observed reduction of free carrier density for compositions with x below 0.4 is attributed to the trapping at DX centers. The ionization energies of DX centers in the InxAl1−xAs system deduced for the investigated range of x are consistent with an extrapolation from data reported for compositions with 0 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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