Asymmetric Relaxation in Epitaxial Layers of III-V Compounds

Autor:	Brian K. Tanner, G. S. Green, M. A. G. Halliwell, A. G. Turnbull
Rok vydání:	1990
Předmět:	Materials science Condensed matter physics law Superlattice Relaxation (physics) Double crystal Epitaxy Layer (electronics) Synchrotron law.invention
Zdroj:	MRS Proceedings. 202
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-202-513
Popis:	Relaxation in a 3μm epitaxial layer of GaAsSb on GaAs, a 1μm layer of InGaAs on InP and an InGaAs superlattice on InP has been investigated by double crystal X-ray diffractometry and double crystal X-ray synchrotron topography and found to be asymmetric. The origins of assymetric relaxation are discussed and the sensitivity of diffractometry and topography to the detection of layer relaxation compared.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cdd0a69202963ca17e406087b5131c63 https://doi.org/10.1557/proc-202-513 Zobrazit plný text záznamu Full text from SpringerLink