A Fast Simulation Tool for Silicon-Pad Detectors
| Autor: | Hyungjun Lee, M. J. Kweon, Jeongsu Bok, Jiyeon Kwon, Jaeyoon Cho, Beomkyu Kim |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Physics Silicon Physics::Instrumentation and Detectors business.industry Detector General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Charged particle Semiconductor detector Optics Semiconductor chemistry 0103 physical sciences High Energy Physics::Experiment Wafer Particle physics experiments 0210 nano-technology business Voltage |
| Zdroj: | Journal of the Korean Physical Society. 77:635-642 |
| ISSN: | 1976-8524 0374-4884 |
| Popis: | Several types of detectors are used to detect charged particles in nuclear and particle physics experiments. Because the semiconductor detector has superior spatial and kinematic resolutions as well as good response time than other types of detectors, it has become one of the most important detectors recently. When charged particles pass through the semiconductor detector, electron-hole pairs are formed inside the detector and move toward the electrode by the electric field inside the detector. At this time, the trajectory and the momentum can be determined through the generated current signal. In this study, we introduce an open-source application named Fast Silicon Device (FSD) Simulation that is developed for a fast simulation of a typical silicon semiconductor detector, such as a p-type pad on an n-type wafer with a reverse-bias voltage. Iterative and multi-grid methods are used to reduce the simulation time for calculating potential and electric field. Current signals produced by the simulation are compared with results obtained by Silvaco TCAD and Garfield++ simulations. The simulation program is based on the ROOT that has been developed by CERN. |
| Databáze: | OpenAIRE |
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