III-V Nanopillar Phototransistor Directly Grown on Silicon

Autor:	Indrasen Bhattacharya, Stephen Adair Gerke, Wai Son Ko, Fanglu Lu, Connie J. Chang-Hasnain
Rok vydání:	2015
Předmět:	Materials science Silicon business.industry Ultrafast optics chemistry.chemical_element Capacitance Photodiode law.invention Responsivity chemistry law Optoelectronics Metalorganic vapour phase epitaxy business Laser light Nanopillar
Zdroj:	CLEO: 2015.
Popis:	We demonstrate InP nanopillar bipolar junction phototransistors monolithically integrated on a Silicon substrate. With a responsivity of 4 A/W and bandwidth of 7.5 GHz, these receivers indicate a route towards efficient on-chip optical interconnects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cdcaf328781e1dd79d47397a62d3404d https://doi.org/10.1364/cleo_si.2015.sw4n.2 Zobrazit plný text záznamu