Coalescence overgrowth of GaN nanocolumns

Autor:	Yung-Sheng Chen, John D. Albrecht, Chih-Chung Yang, Tsung-Yi Tang, Wen-Yu Shiao, Kent L. Averett
Rok vydání:	2008
Předmět:	Coalescence (physics) Materials science Silicon business.industry Wide-bandgap semiconductor chemistry.chemical_element Gallium nitride Chemical vapor deposition Crystal chemistry.chemical_compound chemistry Sapphire Optoelectronics Metalorganic vapour phase epitaxy business
Zdroj:	2008 International Nano-Optoelectronics Workshop.
DOI:	10.1109/inow.2008.4634477
Popis:	Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cdb7edae8a618d094782de70bee9e2fd https://doi.org/10.1109/inow.2008.4634477 Zobrazit plný text záznamu