Variable RF capacitor based on a-Si:H (P-doped) multi-length cantilevers

Autor:	William I. Milne, Liang Wang, Yong Qing Fu, S. B. Milne, Andrew J. Flewitt, J M Miao, Jikui Luo
Rok vydání:	2006
Předmět:	History Cantilever Materials science Differential capacitance business.industry Doping Analytical chemistry Capacitance Computer Science Applications Education law.invention Capacitor law Electrode Optoelectronics Capacitance probe business Voltage
Zdroj:	Journal of Physics: Conference Series. 34:788-793
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/34/1/130
Popis:	A variable RF capacitor with a-Si:H (doped with phosphine) cantilevers as the top electrode were designed and fabricated. Because the top multi-cantilever electrodes have different lengths, increasing the applied voltage pulled down the cantilever beams sequentially, thus realizing a gradual increase of the capacitance with the applied voltage. A high-k material, HfO2, was used as an insulating layer to increase the tuning range of the capacitance. The measured capacitance from the fabricated capacitor was much lower and the pull-in voltage was much higher than those from theoretical analysis because of incomplete contact of the two electrodes, existence of film differential stresses and charge injection effect. Increase of sweeping voltage rate could significantly shift the pull-in voltage to higher values due to the charge injection mechanisms.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cdb43ebec89273986d6480e09eb10b41 https://doi.org/10.1088/1742-6596/34/1/130 Zobrazit plný text záznamu