Achieving a Low Interfacial Density of States with a Flat Distribution in High-$\kappa$ Ga$_{2}$O$_{3}$(Gd$_{2}$O$_{3}$) Directly Deposited on Ge
| Autor: | Yaochung Chang, R. L. Chu, Tsung-Hung Chiang, Lungkun Chu, Tsung-Da Lin, Wei-E Wang, Hanchung Lin, Minghwei Hong, Chunan Lin, J. Raynien Kwo |
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| Rok vydání: | 2011 |
| Předmět: | |
| Zdroj: | Applied Physics Express. 4:111101 |
| ISSN: | 1882-0786 1882-0778 |
| Popis: | The interfacial density of states (Dit) distribution of high-κ dielectric Ga2O3(Gd2O3) [GGO] directly deposited on n-type Ge(100) without invoking any interfacial passivation layer (IPL) was established using conductance measurements and charge pumping (CP) technique. The conductance measurements yielded Dit values in the range of (1–4)×1011 cm-2 eV-1 from the mid-gap energy to the conduction band edge within the Ge band gap, which are consistent with the mean Dit value of ~2×1011 cm-2 eV-1 near the mid-gap obtained independently by the CP method. The flat Dit distribution at the conduction band edge compares favorably with those attained using IPLs such as SiO2/Si-cap and GeO2. |
| Databáze: | OpenAIRE |
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