Calculations of Phosphorous Electronic Levels in Diamond

Autor:	V. V. Tokiy, D. L. Savina
Rok vydání:	1995
Předmět:	Materials science chemistry Chemical physics Phosphorus Vacancy defect engineering chemistry.chemical_element Diamond Diamond cubic engineering.material Shallow donor
Zdroj:	Wide Band Gap Electronic Materials ISBN: 9789401040785
DOI:	10.1007/978-94-011-0173-8_10
Popis:	The present paper is dedicated to the simulation of phosphorus entering into diamond and its influence upon the vacancy in diamond, using the theory of shallow donor states and the tight-binding theory (TBT).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cda746f72a989fff332dcf495788bcb4 https://doi.org/10.1007/978-94-011-0173-8_10 Zobrazit plný text záznamu