Simulation of Graphene Field-Effect Transistors with the Single and Dual Gates

Autor:	N. V. Kolomejtseva, I. A. Romanova, I. I. Abramov, V. A. Labunov
Rok vydání:	2017
Předmět:	Materials science Control and Systems Engineering business.industry Optoelectronics Electrical and Electronic Engineering business Graphene field effect transistors Dual (category theory)
Zdroj:	Nano- i Mikrosistemnaya Tehnika. 19:714-721
ISSN:	1813-8586
DOI:	10.17587/nmst.19.714-721
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cd9329c9e01300b35eb697cf0731f181 https://doi.org/10.17587/nmst.19.714-721 Zobrazit plný text záznamu