The Use of LEXES to Measure the Chemical Composition of In Situ Doped Epitaxial SiGe and SiC for High Performance CMOS Technology

Autor: Mona P. Moret, Hugues Francois-Saint-Cyr, Chrystel Hombourger, Judson Holt, Frank Zhu, Paul Ronsheim, Dmitriy Shneyder, David Snoeyenbos, Michel Schuhmacher
Rok vydání: 2010
Zdroj: ECS Meeting Abstracts. :1961-1961
ISSN: 2151-2043
DOI: 10.1149/ma2010-02/30/1961
Popis: not Available.
Databáze: OpenAIRE