Theoretical evaluation of maximum electric field approximation of direct band-to-band tunneling Kane model for low bandgap semiconductors
| Autor: | Duong Thi Thanh Hien, Nguyen Dang Chien, Le Hong Nhung, Chun-Hsing Shih, Nguyen Hong Minh, Phu Chi Hoa |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
History Engineering Condensed matter physics Field (physics) Band gap business.industry Transistor 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Computer Science Applications Education law.invention Power (physics) Semiconductor law Tunnel junction Electric field 0103 physical sciences 0210 nano-technology business Quantum tunnelling |
| Zdroj: | Journal of Physics: Conference Series. 726:012002 |
| ISSN: | 1742-6596 1742-6588 |
| DOI: | 10.1088/1742-6596/726/1/012002 |
| Popis: | The two-band Kane model has been popularly used to calculate the band-to-band tunneling (BTBT) current in tunnel field-effect transistor (TFET) which is currently considered as a promising candidate for low power applications. This study theoretically clarifies the maximum electric field approximation (MEFA) of direct BTBT Kane model and evaluates its appropriateness for low bandgap semiconductors. By analysing the physical origin of each electric field term in the Kane model, it has been elucidated in the MEFA that the local electric field term must be remained while the nonlocal electric field terms are assigned by the maximum value of electric field at the tunnel junction. Mathematical investigations have showed that the MEFA is more appropriate for low bandgap semiconductors compared to high bandgap materials because of enhanced tunneling probability in low field regions. The appropriateness of the MEFA is very useful for practical uses in quickly estimating the direct BTBT current in low bandgap TFET devices. |
| Databáze: | OpenAIRE |
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