Transparent conducting zinc oxide thin films doped with aluminum and molybdenum

Autor:	David M. Wood, Timothy J. Coutts, Teresa M. Barnes, Joel N. Duenow, Timothy A. Gessert, Bobby To, Matthew Young
Rok vydání:	2007
Předmět:	Electron mobility Materials science Dopant Inorganic chemistry Doping Wide-bandgap semiconductor Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Sputter deposition Condensed Matter Physics Surfaces Coatings and Films chemistry Sputtering Molybdenum Thin film
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:955-960
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.2735951
Popis:	Undoped ZnO, ZnO:Al (0.5, 1, and 2wt% Al2O3), and ZnO:Mo (2wt% Mo) films were deposited by radio-frequency magnetron sputtering. Optimal deposition temperature was found to be ∼200°C for all films. Electron mobilities of 48cm2V−1s−1 were achieved for undoped ZnO films using a sputtering gas with H2∕Ar ratio of 0.3%; corresponding carrier concentrations were ∼3×1019cm−3. A target incorporating 0.5wt% Al2O3 in ZnO yielded films with mobility of 36cm2V−1s−1 and carrier concentration of 3.4×1020cm−3. These films present comparable conductivity and lower free-carrier absorption than films grown from a target containing 2wt% Al2O3. Mo was found to be an n-type dopant of ZnO, though electrical and optical properties were inferior to those of ZnO:Al. Temperature-dependent Hall measurements of ZnO:Al films show evidence of a different scattering mechanism than ZnO:Mo films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cd8515eaea101c2abaef6bdfd39cdee2 https://doi.org/10.1116/1.2735951 Zobrazit plný text záznamu