Transient Single-Photon Avalanche Diode Operation, Minority Carrier Effects, and Bipolar Latch Up

Autor:	Eric A. G. Webster, Robert Henderson, L. Grant
Rok vydání:	2013
Předmět:	Steady state (electronics) Avalanche diode Materials science business.industry Electronic Optical and Magnetic Materials Power (physics) CMOS Single-photon avalanche diode Optoelectronics Transient (oscillation) Electrical and Electronic Engineering business Decoupling (electronics) Diode
Zdroj:	IEEE Transactions on Electron Devices. 60:1188-1194
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2013.2243152
Popis:	The operation of planar CMOS single-photon avalanche diodes (SPADs) is studied with the use of transient technology-computer-aided-design simulations calibrated with measured results. The SPAD's transient I-V curve is reported and is found to have negative differential resistance behavior that is unlike steady state. The quenching process is discussed with reference to power supply decoupling. It is found that minority carriers involved in SPAD breakdown play an important role in device performance and provide insight into a trapless after-pulsing mechanism. The influence of the parasitic bipolar transistor present in planar SPADs is analyzed. The bipolar is found to be responsible for a SPAD latch-up failure mechanism and potentially additional after pulsing. Design methods and bias possibilities for mitigating the influence of the parasitic bipolar are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cd84eafd09816bb027afb712fbe6b099 https://doi.org/10.1109/ted.2013.2243152 Zobrazit plný text záznamu