Epitaxial PbZr.52Ti.48O3 films on SrTiO3/(001)Si substrates deposited by sol–gel method

Autor:	S. M. Smith, D. Convey, T. Eschrich, Jay Curless, S. Voight, Peter Fejes, J. Finder, Zhiyi Jimmy Yu, A. Hooper, K. Eisenbeiser, A. Alec Talin, David Penunuri
Rok vydání:	2002
Předmět:	Diffraction Materials science Physics and Astronomy (miscellaneous) business.industry Epitaxy Ferroelectricity Optics Electron diffraction Transmission electron microscopy X-ray crystallography Surface roughness Optoelectronics Thin film business
Zdroj:	Applied Physics Letters. 81:1062-1064
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1498006
Popis:	We report on the sol–gel deposition and characterization of high-quality, epitaxial films of PbZr.52Ti.48O3 (PZT) on (001)Si substrates, with a thickness range of 400 A to 1 μm. The epitaxial growth of PZT on (001)Si is achieved using a thin template layer of SrTiO3, grown by molecular-beam epitaxy. The sol–gel PZT films have a typical surface roughness of 5 A and exhibit well defined reflective high-energy electron diffraction patterns characteristic of smooth, epitaxial films. Using high-resolution transmission electron microscopy and double-crystal x-ray diffraction, we find that the PZT films are oriented with the c axis normal to the (001)Si plane and with the a axis lying along 〈110〉Si direction. Finally, we measure the electromechanical coupling coefficients and the surface acoustic wave velocities for our films as a function of thickness and compare our experimental data to previously published theoretical values for this system.
Databáze:	OpenAIRE
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