Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10–10> Direction

Autor:	Y.-M. Le Vaillant, S. Clur, Bernard Gil, Olivier Briot, A. Andenet, Roger Aulombard
Rok vydání:	1997
Předmět:	Crystal Condensed Matter::Materials Science Materials science Condensed matter physics Plane (geometry) Exciton Biaxial tensile test Polarization (waves) Spectroscopy Anisotropy Wurtzite crystal structure
Zdroj:	MRS Proceedings. 468
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-468-243
Popis:	Group theory states that the spectroscopy of excitons in GaN epilayers grown with biaxial stress on M Plane (10–10)-oriented substrates is strongly anisotropie in the growth plane, in contrast to the situation if growth occurs on conventional C plane substrates. In addition, we predict existence of nine radiative transitions instead of five, three for each family of A, B, and C excitons. We calculate the in-plane anisotropy and show that, due to the crossed configuration of the wurtzite crystal field and the built-in strain one, the A exciton is significantly coupled to the electromagnetic field in π polarization (E//c).
Databáze:	OpenAIRE
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