Non-Chemically Amplified EUV Resist Based on PHS
| Autor: | Haruyuki Okamura, Masamitsu Shirai, Toshiro Itani, Koichi Maki, Koji Kaneyama |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
inorganic chemicals
chemistry.chemical_classification Materials science Polymers and Plastics Thiol-ene reaction Extreme ultraviolet lithography Radical Organic Chemistry Photoresist equipment and supplies Photochemistry Methacrylate fluids and secretions chemistry Resist Materials Chemistry Thiol bacteria Solubility |
| Zdroj: | Journal of Photopolymer Science and Technology. 22:111-116 |
| ISSN: | 1349-6336 0914-9244 |
| DOI: | 10.2494/photopolymer.22.111 |
| Popis: | Non-chemically amplified negative resist for EUV lithography was designed and the resist property was studied. Photo-induced thiol/ene radical reaction was used to insolubilize the resist based on poly(4-hydroxystyrene) (PHS) derivatives. OH groups of PHS were modified with allyl, norbornen, or methacrylate functions. Dissolution property of the modified-PHS in TMAHaq solution was studied. The degree of the modification of PHS strongly affected the solubility of the modified-PHS in TMAHaq. Resist was formulated as a mixture of modified-PHS, multifunctional thiol compound, and photo-radical generator. Photo-sensitivity of the resist was studied at 254 nm and 13.5 nm. The sensitivity was affected by the concentration of thiol compound added. It was found that the present resist system was highly sensitive (5~6 mJ/cm2) to EUV exposure. |
| Databáze: | OpenAIRE |
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