A Highly Sensitive Filterless Narrowband 4H-SiC Photodetector Employing Charge Narrowing Strategy
| Autor: | Menghui Li, Lulu Geng, Yuying Xi, Kun Hu, Linlin Shi, Wenyan Wang, Yuan Tian, Ting Ji, Kaili Mao, Bingshe Xu, Guohui Li, Hai Lu, yanxia cui |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Journal of Physics D: Applied Physics. |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/1361-6463/accc9a |
| Popis: | Silicon carbide (SiC) semiconductor with wide bandgap has aroused intensive attentions because they can endure harsh environments and high temperatures. SiC photodetectors based on conventional principles usually detect UV light without the ability of wavelength discrimination. Here, resorting to the charge narrowing collection principle, we realize a highly sensitive filterless narrowband 4H-SiC photodetector. The 4H-SiC layer is sufficiently thick to facilitate charge collection narrowing of the device’s external quantum efficiency spectrum, inducing a full width at half-maxima of 14.5 nm at the peak wavelength of 355 nm. Thanks to the Fermi level pinning effect, the proposed photodetector can fully eliminate the injection current; thus it works as a photovoltaic type device with a remarkably low dark current. Consequently, the devices renders a photo-to-dark current ratio as high as 4×107, superior to the performances of most of reported 4H-SiC UV photodetectors. In addition, the device can detect light signals with a power density as low as 96.8 pW/cm2, more than two orders of magnitude superior to that of the commercial product based on the photodiode principle. Moreover, it can endure high temperature of 350 °C, demonstrating bright prospects in harsh industry conditions. |
| Databáze: | OpenAIRE |
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