Effects of substrate resistivity and interface defect density on performance of solar cell with silicon heterojunctions
| Autor: | Wang Hao, Sun Yong-Tang, Sun Tie-Tun, Di Ming-Dong, Zhou Jun |
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| Rok vydání: | 2010 |
| Předmět: |
Range (particle radiation)
Materials science Silicon Condensed matter physics General Physics and Astronomy chemistry.chemical_element Heterojunction Substrate (electronics) law.invention Substrate resistivity chemistry law Electrical resistivity and conductivity Solar cell Electronic engineering Wafer |
| Zdroj: | Acta Physica Sinica. 59:8870 |
| ISSN: | 1000-3290 |
| DOI: | 10.7498/aps.59.8870 |
| Popis: | For silicon heterojunction solar cell with p-type a-Si:H back surface field, the effects of substrate resistivity on the performance of solar cell with different defect densities on the front and the rear surfaces of the p-type c-Si wafer are investigated numerically by computer simulation. The results indicate that the optimized resistivity of the substrate ( ρ op ) is related to the interface defect density on the front surface of c-Si wafer ( D it1 ), and ρ op increases with the increase of D it1 .The value scale of resistivity of substrate is influenced greatly by the interface defect density on the rear surface of c-Si wafer ( D it2 ) for ρ > ρ op , and the larger the value of D it2 , the smaller will the range of acceptable ρ value be. |
| Databáze: | OpenAIRE |
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