Improved Electrical Properties of Top-Gate MoS2 Transistor With NH3-Plasma Treated HfO2 as Gate Dielectric
| Autor: | Jing-Ping Xu, Lu Liu, Zhao Li, Xin-Yuan Zhao |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Electron mobility Materials science business.industry Transistor Gate dielectric Oxide chemistry.chemical_element Dielectric Plasma 01 natural sciences Oxygen Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law Logic gate 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 41:1364-1367 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | The effects of NH3-plasma treating HfO2 gate dielectric on electrical characteristics of top-gate (TG) MoS2 FETs are investigated. The experimental results show that the increase of off-state current after growing HfO2 top-gate dielectric can be considerably decreased by NH3-plasma treating HfO2, because the N incorporation from the NH3-plasma treatment can effectively eliminate the oxygen vacancies and reduce the positive oxide charges in HfO2. The fabricated TG MoS2 FETs with the NH3-plasma treated HfO2 as gate dielectric achieve excellent electrical performances: high on–off ratio of $2.1 \times 107$ , high carrier mobility of 78~87 cm2/Vs and near-ideal subthreshold swing of 72mV/dec. Therefore, the NH3-plasma treated HfO2 as gate dielectric is highly beneficial for fabricating highperformance TG MoS2 FETs. |
| Databáze: | OpenAIRE |
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