300W X-Band Solid State Power Amplifier using discrete GaN HEMT devices with waveguide interface

Autor:	Mynam Harinath, Rabi N Rath, Suman Aich, Jayesh T, M. K. Patel, Rajeev Jyoti, Tuhin Paul, S. K. Garg, Ch. V. N. Rao, Anand K
Rok vydání:	2021
Předmět:	Synthetic aperture radar Power gain Waveguide (electromagnetism) Materials science business.industry Transistor X band High-electron-mobility transistor law.invention Duty cycle law Optoelectronics Radio frequency business
Zdroj:	2021 IEEE MTT-S International Microwave Symposium (IMS).
Popis:	This paper presents the design, simulation and test results of 300W X-Band SSPA using GaN based High electron Mobility transistors (HEMTs) using quadrature power combining technique in balanced configuration for future space based Synthetic Aperture Radar (SAR) applications. This SSPA delivers more than 300W Peak RF Output Power at Centre frequency of 9600 MHz over a bandwidth of 600MHz (@14% duty cycle) with Power Gain more than 60dB.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cd524c1aec1501ca1b075e492100a749 https://doi.org/10.1109/ims19712.2021.9575007 Zobrazit plný text záznamu