The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon (Adv. Quantum Technol. 2/2018)
| Autor: | Ben Murdin, M. A. Lourenço, Kevin P. Homewood, Steven Clowes, Nik Stavrias, Mark A. Hughes, Tom Peach, Kaymar Saeedi, Juerong Li, Steven Chick |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon Condensed matter physics Annealing (metallurgy) chemistry.chemical_element Statistical and Nonlinear Physics Condensed Matter Physics Electronic Optical and Magnetic Materials Bismuth Ion Computational Theory and Mathematics chemistry Lattice (order) Electrical and Electronic Engineering Hyperfine structure Quantum Mathematical Physics |
| Zdroj: | Advanced Quantum Technologies. 1:1870021 |
| ISSN: | 2511-9044 |
| DOI: | 10.1002/qute.201870021 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text