| Popis: |
Results on the electrical resistivity, the stress, and the etching behavior of TaSi/sub 2/ films evaporated under various residual gas conditions, and the correlations to changes in the crystalline structure as determined by X-ray diffractometer measurements, are presented. The influence of substrate temperature on the behavior of the evaporated TaSi/sub 2/ films is discussed. For low substrate temperatures, evaporated TaSi/sub 2/ films are compared to RF sputtered films. The results show that the deposition conditions have to be carefully controlled to ensure high-quality TaSi/sub 2/ films. |
