Spatial distribution of interface traps after hot-carrier stress from forward GIDL measurements
| Autor: | T. Hessler, Serguei Okhonin, M. Dutoit |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
business.industry Analytical chemistry Condensed Matter Physics Spatial distribution Hot carrier stress Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Charge pumping MOSFET Optoelectronics Electrical and Electronic Engineering business Leakage (electronics) |
| Zdroj: | Microelectronic Engineering. 28:261-264 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(95)00055-d |
| Popis: | The feasibility of extracting the spatial distribution of interface traps from forward gate-induced drain leakage (GIDL) measurements on submicron MOSFET's is demonstrated. The results of this technique are similar to those of the charge pumping (CP) one. The differences between the two techniques are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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