Reservoir effect on electromigration mechanisms in dual-damascene Cu interconnect structures
| Autor: | A. V. Vairagar, Ahila Krishnamoorthy, Moritz-Andreas Meyer, Subodh Mhaisalkar, Ehrenfried Zschech |
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| Rok vydání: | 2005 |
| Předmět: |
Void (astronomy)
Materials science Scanning electron microscope Copper interconnect Nucleation Nanotechnology Condensed Matter Physics Electromigration Atomic and Molecular Physics and Optics Secondary electrons Cathode Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Vacancy defect Electrical and Electronic Engineering Composite material |
| Zdroj: | Microelectronic Engineering. 82:675-679 |
| ISSN: | 0167-9317 |
| Popis: | Reservoir effect in dual-damascene Cu interconnect structures caused by electromigration was studied by in situ secondary electron microscopy (SEM). Electromigration-induced void nucleation and apparent void movement in opposite direction to electron flow along the Cu/SiN"x interface was found to be responsible for the observed reservoir effect. The observed void evolutions seem to be contrary to current understanding of reservoir effect based on maximum tensile stress developed at the cathode via and on current gradient induced vacancy flux. The influence of the observed reservoir effect on electromigration mechanisms is discussed in detail. |
| Databáze: | OpenAIRE |
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