High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor
| Autor: | Stephen J. Pearton, C. S. Chern, R. A. Stall, T. Salagaj, P. Zawadzki, C. Yuan, Y. Li, M. Schurman, W. E. Mayo, W. Kroll, S. Krishnankutty, Alexander I. Gurary, C.-Y. Hwang, R. M. Kolbas, Yicheng Lu |
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| Rok vydání: | 1995 |
| Předmět: |
Electron mobility
Photoluminescence Renewable Energy Sustainability and the Environment Chemistry Analytical chemistry Mineralogy Substrate (electronics) Condensed Matter Physics Epitaxy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Full width at half maximum Materials Chemistry Electrochemistry Sapphire Metalorganic vapour phase epitaxy Thin film |
| Zdroj: | Journal of The Electrochemical Society. 142:L163-L165 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2048735 |
| Popis: | Very high quality p-type GaN thin films have been epitaxially grown on c-sapphire substrates by the MOCVD technique in a multiwafer rotating-disk reactor at 1040°C with a GaN buffer layer of ∼200 A grown at 530°C. The undoped GaN films have a low n-type background carrier concentration of ∼5 x 10 16 cm -3 with an x-ray FWHM GaN(0002) of 280 arc-sec across the 1 in. substrate. Biscyclopentadienyl magnesium (Cp 2 Mg) was used as the precursor Cp 2 Mg, the p-dopant. The Mg-doped GaN wafers retained an excellent surface morphology. In addition, after post annealing in N 2 ambient at ∼700°C for an hour, the Hall measurements show 6.7 x 10 17 to 5.2 x 10 18 cm -3 carrier concentration depending on Cp 2 Mg flow rate, with a hole mobility of 10-20 cm 2 /V-s which is the best mobility for those hole concentrations reported in the literature to date. |
| Databáze: | OpenAIRE |
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