Photonic nanostructures for advanced light trapping in thin crystalline silicon solar cells

Autor: Enric Garcia Caurel, Patricia Prod'Homme, Alexandre Dmitriev, Aline Herman, Martin Foldyna, Olivier Deparis, Emmanuel Drouard, Ounsi El Daif, Pere Roca i Cabarrocas, Christian Seassal, Inès Massiot, Kristof Lodewijks, Vladimir Mijkovic, Jef Poortmans, Alexandre Mayer, Jia Liu, Ivan Gordon, Robert Mertens, Valerie Depauw, Babak Heidari, Ismael Cosme, G. Poulain, Islam Abdo, Jérôme Muller, Loïc Lalouat, Regis Orobtchouk, Ki-Dong Lee, Wanghua Chen, Christos Trompoukis, Fabien Mandorlo, Romain Cariou
Rok vydání: 2014
Předmět:
Zdroj: physica status solidi (a). 212:140-155
ISSN: 1862-6300
Popis: We report on the fabrication, integration, and simulation, both optical and optoelectrical, of two-dimensional photonic nanostructures for advanced light trapping in thin crystalline silicon (c-Si) solar cells. The photonic nanostructures are fabricated by the combination of various lithography (nanoimprint, laser interference, and hole mask colloidal) and etching (dry plasma and wet chemical) techniques. The nanopatterning possibilities thus range from periodic to random corrugations and from inverted nanopyramids to high aspect ratio profiles. Optically, the nanopatterning results in better performance than the standard pyramid texturing, showing a more robust behavior with respect to light incidence angle. Electrically, wet etching results in higher minority carrier lifetimes compared to dry etching. From the integration of the photonic nanostructures into a micron-thin c-Si solar cell certain factors limiting the efficiencies are identified. More precisely: (a) the parasitic absorption is limiting the short circuit current, (b) the conformality of thin-film coatings on the nanopatterned surface is limiting the fill factor, and (c) the material damage from dry etching is limiting the open circuit voltage. From optical simulations, the optimal pattern parameters are identified. From optoelectrical simulations, cell design considerations are discussed, suggesting to position the junction on the opposite side of the nanopattern.
Databáze: OpenAIRE