High-Quality 100/150 mm p-Type 4H-SiC Epitaxial Wafer for High-Voltage Bipolar Devices
| Autor: | Akira Bandoh, Ishibashi Naoto, Hiroshi Osawa, Kenji Momose, Fukada Keisuke |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering Doping High voltage 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Quality (physics) Mechanics of Materials 0103 physical sciences Electronic engineering Optoelectronics General Materials Science Wafer Basal plane P type doping 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 897:55-58 |
| ISSN: | 1662-9752 |
| Popis: | This paper presents a high-quality 100/150 mm p-type 4H-SiC epitaxial wafer prepared by chemical vapor deposition; this wafer is suitable for high-voltage bipolar device applications. The density of killer defects for bipolar devices including downfalls, triangular-shaped defects, and basal plane dislocations (BPDs), is less than 0.1 cm-2 in the proposed 100 mm n/p multilayer epitaxial wafer. The in-plane thickness and doping uniformity of the 150 mm p-layer is 3.0% and 11.0%, respectively. The doping concentration of the p-layer can be controlled in the 1E+16 cm-3 to 1E+19 cm-3 range. |
| Databáze: | OpenAIRE |
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