New Etching System with a Large Diameter Using Electron Beam Excited Plasma

Autor:	Makoto Ryoji, Yosinori Dake, Tamio Hara, Yoshinobu Aoyagi, Manabu Hamagaki, Katsu Ohnishi, Masakuni Tohkai
Rok vydání:	1992
Předmět:	Materials science Plasma etching Silicon General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Plasma engineering.material Photoresist Polycrystalline silicon chemistry Etching (microfabrication) engineering Wafer Reactive-ion etching
Zdroj:	Japanese Journal of Applied Physics. 31:4357
ISSN:	1347-4065 0021-4922
Popis:	A new etching system using electron-beam-excited plasma (EBEP) has been developed. This EBEP system is able to steadily produce a high-density plasma with a large diameter by introducing a high-current low electron beam into the etching chamber. The nonuniformity of plasma density and floating potential in an 8-inch wafer are improved up to ±2.5% and ±2 V, respectively. Anisotropic etching of n+-poly-Si in a pure Cl2 plasma is achieved with a high etch rate of 360 nm/min. The etching selectivity is 40 for poly-Si/photoresist and 150 for poly-Si/SiO2. These experimental results show that the EBEP etching system is suitable for manufacturing advanced ULSI.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::cd03e0d14a468ffc79b01a49bc41550c https://doi.org/10.1143/jjap.31.4357 Zobrazit plný text záznamu