Variation-Tolerant Recall Operation for Nonvolatile SRAM Integrated with Ferroelectric Capacitor

Autor:	Ai-Fang Li, Ruei-Yu Huang, Vita Pi-Ho Hu
Rok vydání:	2022
Zdroj:	2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
DOI:	10.1109/edtm53872.2022.9798000
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ccfa83c0d249b8f2afef00a951ea8b6d https://doi.org/10.1109/edtm53872.2022.9798000 Zobrazit plný text záznamu