| Autor: |
Fumiyoshi Matsuoka, Koichi Kanzaki, Hiroshi Iwai, R. Nakata, H. Itoh, K. Hama |
| Rok vydání: |
2003 |
| Předmět: |
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| Zdroj: |
1988. Proceedings., Fifth International IEEE VLSI Multilevel Interconnection Conference. |
| DOI: |
10.1109/vmic.1988.14230 |
| Popis: |
The reliability of a via hole filling structure using selective tungsten CVD by a cold-wall reactor using WF/sub 6/ and SiH/sub 4/ has been studied. It has been experimentally determined that the reliability for the electromigration of a tungsten-filled via hole structure is significantly improved compared with that for a conventional non-filled via hole structure. Via hole resistance change during the electromigration test was also evaluated. A phenomenon wherein via hole resistance increased due to Si migration was found, specifically under high-temperature conditions. However, it is negligibly small for the usual operating conditions. The results are considered pertinent to the development of VLSI/ULSI devices. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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